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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. january 2010 doc id 16958 rev 1 1/13 13 std6n95k5, stf6n95k5 STP6N95K5, stw6n95k5 n-channel 950 v, 1 ? , 5 a to-220, to-220fp, to-247, dpak zener-protected supermesh 5? power mosfet features dpak worldwide best r ds(on) worldwide best fom (figure of merit) ultra low gate charge 100% avalanche tested zener-protected application switching applications description supermesh 5? is a revolutionary avalanche- rugged very high voltage power mosfet technology based on an innovative proprietary vertical structure. the result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. figure 1. internal schematic diagram type v dss r ds(on) max i d p w std6n95k5 950 v < 1.25 ? 5 a 90 w stf6n95k5 25 w STP6N95K5 90 w stw6n95k5 to-220 1 2 3 1 2 3 1 2 3 to-220fp to-247 1 3 dpak d(2) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging std6n95k5 6n95k5 dpak tape and reel stf6n95k5 to-220fp tu b e STP6N95K5 to-220 stw6n95k5 to-247 www.st.com
contents std/f/p/w6n95k5 2/13 doc id 16958 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
std/f/p/w6n95k5 electrical ratings doc id 16958 rev 1 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220, dpak to-247 to-220fp v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 5 a i d drain current (continuous) at t c = 100 c 3.1 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 20 a p tot total dissipation at t c = 25 c 90 25 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) tbd a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) tbd mj v esd(g-s) gate source esd (hbm-c = 100 pf, r = 1.5 k ? ) tbd v v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v dv/dt (2) 2. i sd 5 a, di/dt 100 a/s, v peak v (br)dss peak diode recovery voltage slope tbd v/ns t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit to-220 dpak to-247 to-220fp rthj-case thermal resistance junction-case max 1.38 5 c/w rthj-amb thermal resistance junction-amb max 62.5 50 62.5 c/w rthj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 50 c/w t l maximum lead temperature for soldering purpose 300 300 c
electrical characteri stics std/f/p/w6n95k5 4/13 doc id 16958 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 950 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,tc=125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 2.5 a 1 1.25 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 - 450 - pf c oss output capacitance 30 pf c rss reverse transfer capacitance 1pf c o(tr) (1) 1. time related is defined as a c onstant equivalent capacitance givi ng the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 720 v -tbd- pf c o(er) (2) 2. energy related is defined as a c onstant equivalent capacitance givi ng the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -tbd- pf r g intrinsic gate resistance f = 1mhz open drain - 10.5 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 760 v, i d = 5 a v gs =10 v (see figure 3 ) - 11 tbd tbd - nc nc nc
std/f/p/w6n95k5 electrical characteristics doc id 16958 rev 1 5/13 the built-in-back zener diodes have specific ally been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible vo ltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 475 v, i d = 2.5 a, r g =4.7 ? , v gs =10 v (see figure 5 ) - tbd tbd tbd tbd - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) - 5 20 ma a v sd (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 5 a, v gs =0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, v dd = 60 v di/dt = 100 a/s, (see figure 4 ) - tbd tbd tbd ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a,v dd = 60 v di/dt=100 a/s, tj=150 c (see figure 4 ) - tbd tbd tbd ns c a table 8. gate-source zener diode symbol parameter test cond itions min typ. max. unit bv gso gate-source breakdown voltage igs 1ma, (open drain) 30 - v
test circuits std/f/p/w6n95k5 6/13 doc id 16958 rev 1 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive waveform figure 7. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
std/f/p/w6n95k5 package mechanical data doc id 16958 rev 1 7/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack ? is an st trademark.
package mechanical data std/f/p/w6n95k5 8/13 doc id 16958 rev 1 figure 8. to-220fp drawing table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
std/f/p/w6n95k5 package mechanical data doc id 16958 rev 1 9/13 to-220 type a mechanical data dim mm min typ max a 4.40 4.60 b 0.61 0. 88 b 1 1.14 1.70 c0.4 8 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4. 9 5 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 . 93 l20 16.40 l 3 02 8 . 9 0 ? p 3 .75 3 . 8 5 q 2.65 2. 9 5 0015988_rev_s
package mechanical data std/f/p/w6n95k5 10/13 doc id 16958 rev 1 dim. mm. min. typ. max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
std/f/p/w6n95k5 package mechanical data doc id 16958 rev 1 11/13 dim. mm. . x a m p y t . n i m 0 4 . 2 0 2 . 2 a 0 1 . 1 0 9 . 0 1 a 3 2 . 0 3 0 . 0 2 a 0 9 . 0 4 6 . 0 b 0 4 . 5 0 2 . 5 4 b 0 6 . 0 5 4 . 0 c 0 6 . 0 8 4 . 0 2 c 0 2 . 6 0 0 . 6 d 0 1 . 5 1 d 0 6 . 6 0 4 . 6 e 0 7 . 4 1 e 8 2 . 2 e 0 6 . 4 0 4 . 4 1 e 0 1 . 0 1 5 3 . 9 h 1 l 0 8 . 2 1 l 0 8 . 0 2 l 1 0 6 . 0 4 l 0 2 . 0 r v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
revision history std/f/p/w6n95k5 12/13 doc id 16958 rev 1 5 revision history table 10. document revision history date revision changes 12-jan-2010 1 first release.
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